Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
نویسندگان
چکیده
منابع مشابه
Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes
Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on sapphire. The analysis of the experimental data is made by a detailed theoretical study of the steady-state and small-signal electrical characteristics of the structures. Numerical simula...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2019
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-019-2872-7